| PART |
Description |
Maker |
| CXK5863 CXK5863AP-20 CXK5863AP-25 CXK5863AJ-20 CXK |
8192 word x 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
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http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
From old datasheet system
1048576-1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM
(M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
RENESAS[Renesas Electronics Corporation]
|
| TC55W1600FT-70 TC55W1600FT TC55W1600FT-55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55W800FT |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
|
| UPD4464 UPD4464C-12 UPD4464C-12L UPD4464C-15 UPD44 |
8192 x 8 Bit Static CMOS RAM
8,192 X 8 - BIT STATIC CMOS RAM
|
NEC
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IDT7203L20J IDT7203L20JB IDT7204L20J IDT7204L20JB |
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
CMOS ASYNCHRONOUS FIFO 2048 x 9 4096 x 9 8192 x 9 and 16384 x 9
RES,SMD,100,1%,0.063W,0603
High-speed double diode - Cd max.: 1.5 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 80 V
Schottky barrier diode - Cd max.: 100@VR=4V pF; Configuration: single ; IF: 1 A; IFSM max: 25 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
CMOS ASYNCHRONOUS FIFO 2048 x 9/ 4096 x 9/ 8192 x 9 and 16384 x 9
Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 3900@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9
INSERT, COAX FEMALE STRAIGHTINSERT, COAX FEMALE STRAIGHT; Impedance:50R; Coaxial cable type:RG174AU/RG188AU/RG316AU 16K X 9 OTHER FIFO, 50 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 30 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CDIP28
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Air Cost Control
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| TC55V1403J-12 |
4M Word x 1 Bit/1M Word x 4 Bit CMOS Static RAM(4M x 1 1M x 4 CMOS 静RAM)
|
Toshiba Corporation
|
| M5M5408BTP M5M5408BRT M5M5408BFP M5M5408BFP-55LI |
524288-word by 8-bit CMOS static RAM, 55ns
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
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